Abstract
AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have shown that templates with small tensile elastic stresses (<0.5 GPa) and densities of screw and edge grown-in dislocations 4 × 108 and 8 × 109 cm−2, respectively, can be produced.
Similar content being viewed by others
REFERENCES
Properties of Group III Nitrides, Ed. by J. H. Edgar (INSPEC, London, 1994).
N. Faleev, H. Lu, and W. J. Schaff, J. Appl. Phys. 101, 093516 (2007).
D. V. Nechaev, P. A. Aseev, V. N. Jmerik, P. N. Brunkov, Y. V. Kuznetsova, A. A. Sitnikova, V. V. Ratnikov, and S. V. Ivanov, J. Cryst. Growth 378, 319 (2013).
V. N. Jmerik, D. V. Nechaev, and S. V. Ivanov, Molecular Beam Epitaxy: From Research to Mass Production, 2nd ed. (Elsevier, Amsterdam, 2018), p. 135.
D. S. Zolotukhin, D. V. Nechaev, S. V. Ivanov, and V. N. Zhmerik, Tech. Phys. Lett. 43, 262 (2017).
V. Srikant, J. S. Speck, and D. R. Clarke, J. Appl. Phys. 82, 4286 (1997).
H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel, Appl. Phys. Lett. 77, 2145 (2000).
M. A. Moram and M. E. Vickers, Rep. Prog. Phys. 72, 036502 (2009).
T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag., A 77, 1013 (1998).
B. W. Sheldon, A. Rajamani, A. Bhandari, E. Chason, S. K. Hong, and R. Beresford, J. Appl. Phys. 98, 043509 (2005).
W. D. Nix and B. M. Clemens, J. Mater. Res. 14, 3467 (1999).
S. Raghavan and J. M. Redwing, J. Appl. Phys. 96, 2995 (2004).
R. N. Kyutt, V. V. Ratnikov, G. N. Mosina, and M. P. Shcheglov, Phys. Solid State 41, 25 (1999).
A. E. Romanov and J. S. Speck, Appl. Phys. Lett. 83, 2569 (2003).
P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 97, 103534 (2005).
S. K. Mathis, A. E. Romanov, L. F. Chen, G. E. Beltz, W. Pompe, and J. S. Speck, J. Cryst. Growth 231, 371 (2001).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors state that they have no conflict of interest.
Additional information
Translated by N. Petrov
Rights and permissions
About this article
Cite this article
Ratnikov, V.V., Nechaev, D.V., Myasoedov, A.V. et al. Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy. Tech. Phys. Lett. 46, 389–392 (2020). https://doi.org/10.1134/S1063785020040240
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785020040240