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Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

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Abstract

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p–n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.

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Correspondence to V. V. Tregulov.

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Original Russian Text © V.V. Tregulov, V.G. Litvinov, A.V. Ermachikhin, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 21, pp. 3–9.

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Tregulov, V.V., Litvinov, V.G. & Ermachikhin, A.V. Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon. Tech. Phys. Lett. 43, 955–957 (2017). https://doi.org/10.1134/S1063785017110128

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  • DOI: https://doi.org/10.1134/S1063785017110128

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