Abstract
We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4H-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons approached 6000 cm2/(V · s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at Т = 300 К in the absence of intercalated hydrogen.
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Original Russian Text © S.P. Lebedev, I.A. Eliseyev, V.Yu. Davydov, A.N. Smirnov, V.S. Levitskii, M.G. Mynbaeva, M.M. Kulagina, B. Hähnlein, J. Pezoldt, A.A. Lebedev, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 18, pp. 64–72.
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Lebedev, S.P., Eliseyev, I.A., Davydov, V.Y. et al. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium. Tech. Phys. Lett. 43, 849–852 (2017). https://doi.org/10.1134/S106378501709022X
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DOI: https://doi.org/10.1134/S106378501709022X