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The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon

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Abstract

The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/p-Si/Al structures. Long-term stable switched-state memory in the region of the I–V curve hysteresis is revealed. This effect is controlled by the irradiation dose.

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Authors and Affiliations

  1. Chernyshevsky Saratov State University, Saratov, 410012, Russia

    D. I. Bilenko, V. V. Galushka, E. A. Zharkova, V. I. Sidorov, D. V. Terin & E. I. Khasina

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  1. D. I. Bilenko
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  2. V. V. Galushka
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  3. E. A. Zharkova
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  4. V. I. Sidorov
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  5. D. V. Terin
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  6. E. I. Khasina
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Corresponding author

Correspondence to D. I. Bilenko.

Additional information

Original Russian Text © D.I. Bilenko, V.V. Galushka, E.A. Zharkova, V.I. Sidorov, D.V. Terin, E.I. Khasina, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 3, pp. 57–63.

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Bilenko, D.I., Galushka, V.V., Zharkova, E.A. et al. The effect of low doses of gamma radiation on the electrophysical properties of mesoporous silicon. Tech. Phys. Lett. 43, 166–168 (2017). https://doi.org/10.1134/S1063785017020031

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  • DOI: https://doi.org/10.1134/S1063785017020031

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