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The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals

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Abstract

The Auger electron spectroscopy and transmission electron microscopy techniques have been used to study the composition and structure of the surface layers of NiTi single crystals implanted with silicon ions at various directions of the incident ion beam. The role of “soft” [111]B2 and “hard” [001]B2 orientations of the NiTi single crystal in formation of the ion-beam-modified surface layer and the defect structure of Siion-implanted near-surface layers is revealed.

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Authors and Affiliations

  1. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences, Tomsk, 634021, Russia

    T. M. Poletika, L. L. Meisner, S. L. Girsova, A. V. Tverdokhlebova & S. N. Meisner

  2. National Researh Tomsk State University, Tomsk, 634050, Russia

    L. L. Meisner & S. N. Meisner

Authors
  1. T. M. Poletika
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  2. L. L. Meisner
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  3. S. L. Girsova
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  4. A. V. Tverdokhlebova
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  5. S. N. Meisner
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Correspondence to T. M. Poletika.

Additional information

Original Russian Text © T.M. Poletika, L.L. Meisner, S.L. Girsova, A.V. Tverdokhlebova, S.N. Meisner, 2016, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 42, No. 6, pp. 6–13.

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Poletika, T.M., Meisner, L.L., Girsova, S.L. et al. The role of crystallographic anisotropy in formation of the structure of silicon-implanted layers of NiTi single crystals. Tech. Phys. Lett. 42, 280–283 (2016). https://doi.org/10.1134/S1063785016030299

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  • DOI: https://doi.org/10.1134/S1063785016030299

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