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Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes

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Abstract

The processing technique for microwave p–i–n diodes based on SiC (silicon carbide) has been developed. Based on these diodes, switches in the 3-cm range have been fabricated. It has been shown that the working power of the developed switches is about 10 times higher than that based on Si diodes at the same base thickness, which is equal to 5 μm. The ways of further improvement of the processing technique of these devices have been suggested.

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Author information

Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. A. Lebedev & A. M. Strel’chuk

  2. ZAO Svetlana-Elektronpribor, St. Petersburg, Russia

    A. V. Kirillov & L. P. Romanov

  3. Information Technologies, Mechanics, and Optics (ITMO) University, 197101, St. Petersburg, Russia

    A. V. Zubov

Authors
  1. A. A. Lebedev
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  2. A. V. Kirillov
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  3. L. P. Romanov
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  4. A. V. Zubov
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  5. A. M. Strel’chuk
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Corresponding author

Correspondence to A. A. Lebedev.

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We declare that we do not have any conflicts of interest.

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Translated by M. Astrov

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Lebedev, A.A., Kirillov, A.V., Romanov, L.P. et al. Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes. Tech. Phys. 65, 250–253 (2020). https://doi.org/10.1134/S1063784220020139

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  • DOI: https://doi.org/10.1134/S1063784220020139

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