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Formation of textured Ni(200) and Ni(111) films by magnetron sputtering

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Abstract

The effect of the working gas pressure (P ≈ 1.33–0.09 Pa) and the substrate temperature (T s ≈ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO2/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters P ≈ 0.13–0.09 Pa and T s ≈ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at P ≈ 1.33–0.3 Pa or upon cooling a substrate to T s ≈ 77 K.

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Correspondence to Yu. V. Nikulin.

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Original Russian Text © A.S. Dzhumaliev, Yu.V. Nikulin, Yu.A. Filimonov, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 86, No. 6, pp. 126–131.

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Dzhumaliev, A.S., Nikulin, Y.V. & Filimonov, Y.A. Formation of textured Ni(200) and Ni(111) films by magnetron sputtering. Tech. Phys. 61, 924–928 (2016). https://doi.org/10.1134/S1063784216060141

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  • DOI: https://doi.org/10.1134/S1063784216060141

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