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Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions

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Abstract

The possibility to control the localization of implanted carbon in sites and interstices in silicon immediately during the implantation has been demonstrated. The formation of residual extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions has been shown. It has been found that the formation of residual defects can be suppressed due to annihilation of point defects at C atoms (the Watkins effect). The positive effect is attained if implanted carbon is localized over lattice sites, which is provided by its implantation with the effective current density of the scanning ion beam no lower than 1.0 μA cm−2.

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Authors and Affiliations

  1. Tafila Technical University, P. O. Box 179, Tafila, 66110, Jordan

    M. Jadan

  2. Belarusian State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus

    A. R. Chelyadinskii & V. B. Odzhaev

Authors
  1. M. Jadan
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  2. A. R. Chelyadinskii
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  3. V. B. Odzhaev
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Correspondence to M. Jadan.

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Original Russian Text © M. Jadan, A.R. Chelyadinskii, V.B. Odzhaev, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 2, pp. 243–246.

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Jadan, M., Chelyadinskii, A.R. & Odzhaev, V.B. Localization of carbon atoms and extended defects in silicon implanted separately with C+ and B+ ions and jointly with C+ and B+ ions. Phys. Solid State 55, 278–281 (2013). https://doi.org/10.1134/S1063783413020108

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  • DOI: https://doi.org/10.1134/S1063783413020108

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