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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

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Abstract

by molecular-beam epitaxy we have grown epitaxial layers of GaAs1–xBix solid solutions with a bismuth content of 0 < x < 0.02. Structural and optical properties of the layers were investigated. We determine the influence of the bismuth flux and substrate temperature on the bismuth incorporation into the growing layers.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    B. R. Semyagin, A. V. Kolesnikov, M. A. Putyato & V. V. Preobrazhenskii

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    T. B. Popova, V. I. Ushanov & V. V. Chaldyshev

Authors
  1. B. R. Semyagin
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  2. A. V. Kolesnikov
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  3. M. A. Putyato
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  4. V. V. Preobrazhenskii
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  5. T. B. Popova
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  6. V. I. Ushanov
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  7. V. V. Chaldyshev
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Correspondence to V. V. Chaldyshev.

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Semyagin, B.R., Kolesnikov, A.V., Putyato, M.A. et al. Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy. Semiconductors 57, 405–409 (2023). https://doi.org/10.1134/S1063782623060155

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  • DOI: https://doi.org/10.1134/S1063782623060155

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