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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots

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Abstract

The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 μm and a length of the absorbing region from 92 μm to 400 μm. A low dark current density (1.1 and 22 μA/cm2 at –1 and –20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC-circuit, were obtained.

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ACKNOWLEDGMENTS

The work was carried out on the equipment of the large-scale research facilities Complex optoelectronic stand of the National Research University Higher School of Economics – Saint-Petersburg.

Funding

The studies were carried out as part of the Fundamental Research Program of the National Research University Higher School of Economics. The work of E.S. Kolodezny was financially supported by the program “Priority 2030” in terms of studying the photocurrent of detectors.

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Authors and Affiliations

  1. HSE University, 190008, St. Petersburg, Russia

    N. V. Kryzhanovskaya, S. A. Blokhin, I. S. Makhov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, F. I. Zubov, M. V. Maximov & A. E. Zhukov

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    S. A. Blokhin, S. A. Mintairov, N. A. Kaluyzhnyy, Yu. A. Guseva & M. M. Kulagina

  3. Alferov University, Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021, St. Petersburg, Russia

    F. I. Zubov & M. V. Maximov

  4. ITMO University, 197101, St. Petersburg, Russia

    E. S. Kolodeznyi

Authors
  1. N. V. Kryzhanovskaya
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  2. S. A. Blokhin
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  3. I. S. Makhov
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  4. E. I. Moiseev
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  5. A. M. Nadtochiy
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  6. N. A. Fominykh
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  7. S. A. Mintairov
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  8. N. A. Kaluyzhnyy
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  9. Yu. A. Guseva
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  10. M. M. Kulagina
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  11. F. I. Zubov
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  12. E. S. Kolodeznyi
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  13. M. V. Maximov
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  14. A. E. Zhukov
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Corresponding author

Correspondence to N. V. Kryzhanovskaya.

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Kryzhanovskaya, N.V., Blokhin, S.A., Makhov, I.S. et al. Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots. Semiconductors 57, 594–598 (2023). https://doi.org/10.1134/S1063782623050093

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  • DOI: https://doi.org/10.1134/S1063782623050093

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