Abstract
Two waveguide heterostructures with an array of 10 HgCdTe/CdHgTe quantum wells grown within a single technological series and designed to generate stimulated emission near 20 and 30 μm are studied. At a temperature of 10 K, stimulated emission in the “short-wavelength” structure is obtained at a wavelength of ∼23.9 μm, while in the “long-wavelength” structure stimulated emission is not observed. Calculations of optical absorption in the passive layers for both structures are carried out and it is demonstrated that its level is higher in the long-wavelength structure. Approaches are proposed to minimize its effect on the generation of stimulated emission.
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ACKNOWLEDGMENTS
The equipment of the unique scientific installation Femtospectr of the shared resource center of the Institute for Physics of Microstructures, Russian Academy of Sciences, was used in the work.
Funding
The calculation of the internal losses in the passive layers of the studied structures was supported by the Russian Foundation for Basic Research (grant no. 20-52-50004) and the characterization of the samples and the study of SE was supported by the Russian Science Foundation (grant no. 17-12-01360).
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Translated by V. Alekseev
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Utochkin, V.V., Dubinov, A.A., Fadeev, M.A. et al. Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells. Semiconductors 55, 899–902 (2021). https://doi.org/10.1134/S1063782621100262
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DOI: https://doi.org/10.1134/S1063782621100262