Skip to main content
SpringerLink
Log in

Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The results of studies of the time-resolved photoluminescence in semiconductor heterostructures containing two noninteracting InGaAs quantum wells in a GaAs matrix are reported. One of the quantum wells was undoped, and the other was uniformly doped with chromium atoms (InGaAs:Cr). It was shown that the introduction of Cr had a profound effect on the recombination lifetime of charge carriers in quantum wells. The change in the photoluminescence intensity after excitation cannot be described by a monoexponential decay function, which is attributed to a change in the built-in electric field of the surface barrier in the quantum wells because of screening by photoexcited charge carriers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.

Similar content being viewed by others

REFERENCES

  1. H. Onho, J. Magn. Magn. Mater. 200, 110 (1999).

    Article  ADS  Google Scholar 

  2. A. Dakhama, B. Lakshmi, and D. Heiman, Phys. Rev. B 67, 115204 (2003).

    Article  ADS  Google Scholar 

  3. G. V. Astakhov, R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, M. N. Tkachuk, Yu. G. Kusrayev, T. Kiessling, W. Ossau, and L. W. Molenkamp, Phys. Rev. Lett. 101, 076602 (2008).

    Article  ADS  Google Scholar 

  4. R. Schulz, T. Korn, D. Stich, U. Wurstbauer, D. Schuh, W. Wegscheider, and G. Schuller, Phys. E 40, 2163 (2008).

    Article  Google Scholar 

  5. M. J. Papastamatiou and G. J. Papaioannou, J. Appl. Phys. 68, 1094 (1990).

    Article  ADS  Google Scholar 

  6. D. L. Budnitskii, V. A. Novikov, O. P. Tolbanov, and I. A. Prudaev, Russ. Phys. J. 51, 531 (2008).

    Article  Google Scholar 

  7. H. Fritzsche, Phys. Rev. 99, 406 (1955).

    Article  ADS  Google Scholar 

  8. A. V. Kudrin, O. V. Vikhrova, Yu. A. Danilov, M. V. Dorokhin, I. L. Kalentyeva, A. A. Konakov, V. K. Vasiliev, D. A. Pavlov, Yu. V. Usov, and B. N. Zvonkov, J. Magn. Magn. Mater. 478, 84 (2019).

    Article  ADS  Google Scholar 

  9. M. Jo, G. Duan, T. Mano, and K. Sakoda, Nanoscale Res. Lett. 6, 76 (2011).

    Article  ADS  Google Scholar 

  10. O. V. Vikhrova, Yu. A. Danilov, M. N. Drozdov, Yu. N. Drozdov, B. N. Zvonkov, and P. A. Yunin, in Proceedings of the Symposium on Nanophysics and Nanoelectronics, Nizh. Novgorod, Russia,2014, Vol. 2, p. 446.

  11. V. N. Astratov and Yu. A. Vlasov, J. Phys. IV 3, 277 (1993). https://doi.org/10.1051/jp4:1993555

    Article  Google Scholar 

  12. A. Zangwill, Physics at Surfaces (Cambridge Univ., Cambridge, 1988).

    Book  Google Scholar 

  13. F. Schubert, Light-Emitting Diodes (Cambridge Univ., Cambridge, 2006).

    Book  Google Scholar 

  14. F. Daiminger, A. Schmidt, F. Faller, and A. Forchel, Proc. SPIE 2139, 213 (1994).

    Article  ADS  Google Scholar 

  15. R. Zucca, J. Appl. Phys. 48, 1987 (1977).

    Article  ADS  Google Scholar 

  16. G. Schumm and T. K. Plant, Solid-State Electron. 30, 109 (1987).

    Article  ADS  Google Scholar 

Download references

Funding

The study was supported by the President of the Russian Federation, grant no. MD-1708.2019.2, the Russian Foundation for Basic Research, project no. 20-38-70063, and by the FAPEMIG grants CEX-APQ-00753-18.

Author information

Authors and Affiliations

  1. Physical Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    M. V. Dorokhin, P. B. Demina, Yu. A. Danilov, O. V. Vikhrova, Yu. M. Kuznetsov & M. V. Ved’

  2. Instituto de Fisica “Gleb Wataghin”, UNICAMP, Campinas, SP, Brazil

    F. Iikawa

  3. Universidade Federal de Uberlândia-ICENP, Ituiutaba, MG, Brazil

    M. A. G. Balanta

Authors
  1. M. V. Dorokhin
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. B. Demina
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yu. A. Danilov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. O. V. Vikhrova
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yu. M. Kuznetsov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. M. V. Ved’
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. F. Iikawa
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. M. A. G. Balanta
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. V. Dorokhin.

Ethics declarations

The authors declare that they have no conflict of interest.

Additional information

Translated by E. Smorgonskaya

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Dorokhin, M.V., Demina, P.B., Danilov, Y.A. et al. Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells. Semiconductors 54, 1341–1346 (2020). https://doi.org/10.1134/S1063782620100061

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782620100061

Keywords:

Search

Navigation