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Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80–260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tanδ based on open high-quality Fabry–Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan δ ≈ (1–2) × 10–4 even for a noticeable, at a level of 1012 cm–3, free carrier concentration. In contrast with GaAs and Si, tanδ in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.

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Funding

This study was supported by the Russian Scientific Foundation, project no. 18-79-10112. The statement of the problem on using semiconductor mirrors in the compression circuit of pulses of megawatt gyrotrons for the high-gradient acceleration of particles and evaluation of the main parameters of semiconductors required to solve this problem are formulated in the Russian Science Foundation project no. 19-79-30071.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    K. V. Maremyanin, V. V. Rumyantsev, K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin & S. V. Morozov

  2. Institute of Applied Physics, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    V. V. Parshin, E. A. Serov, A. P. Fokin, M. Yu. Glyavin & G. G. Denisov

  3. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia

    S. S. Morosov

Authors
  1. K. V. Maremyanin
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  2. V. V. Parshin
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  3. E. A. Serov
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  4. V. V. Rumyantsev
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  5. K. E. Kudryavtsev
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  6. A. A. Dubinov
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  7. A. P. Fokin
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  8. S. S. Morosov
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  9. V. Ya. Aleshkin
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  10. M. Yu. Glyavin
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  11. G. G. Denisov
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  12. S. V. Morozov
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Corresponding author

Correspondence to V. V. Rumyantsev.

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The authors declare that they have no conflict of interest.

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Translated by N. Korovin

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Maremyanin, K.V., Parshin, V.V., Serov, E.A. et al. Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed Gyrotrons. Semiconductors 54, 1069–1074 (2020). https://doi.org/10.1134/S1063782620090195

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  • DOI: https://doi.org/10.1134/S1063782620090195

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