Abstract
The decomposition of a solid solution of interstitial magnesium Mgi in silicon is studied. Float-Zone dislocation-free single-crystal n-Si with a resistivity of ~8 × 103 Ω cm and oxygen and carbon contents of ~5 × 1014 cm–3 and ~1 × 1015 cm–3 is used in the experiments. The samples are doped using the diffusion sandwich method at T =1100°C followed by quenching. Decomposition of the supersaturated Mgi solid solution is studied by observing the kinetics of increasing the resistivity of doped samples resulting from their annealing in the range T= 400–620°C. It is found that the decomposition is characterized by an activation energy of Ea ≈ 1.6 eV, which is close to the previously determined diffusion activation energy of Mgi in silicon. It is also shown that Si:Mg exhibits stable properties at temperatures not exceeding 400°C, which is important for its possible practical application.
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ACKNOWLEDGMENTS
This study was supported by the Presidium of the Russian Academy of Sciences, program no. 8 “Condensed Matter Physics and Next Generation Materials”.
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Translated by A. Kazantsev
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Shuman, V.B., Lodygin, A.N., Portsel, L.M. et al. Decomposition of a Solid Solution of Interstitial Magnesium in Silicon. Semiconductors 53, 296–297 (2019). https://doi.org/10.1134/S1063782619030175
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DOI: https://doi.org/10.1134/S1063782619030175