Abstract
The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
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ACKNOWLEDGMENTS
This study was supported by the Russian Foundation for Basic Research, project nos. 15-02-07935 and by the Ministry of Education and Science of the Russian Federation, project no. 3.3854.2017/4.6.
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Pavelyev, D.G., Vasilev, A.P., Kozlov, V.A. et al. Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices. Semiconductors 52, 1448–1456 (2018). https://doi.org/10.1134/S1063782618110192
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DOI: https://doi.org/10.1134/S1063782618110192