Abstract
The fitting of θ/2θ and ω peaks in X-ray diffraction curves is shown to be most accurate in the case of using an inverse fourth-degree polynomial or probability density function with Student’s distribution (Pearson type VII function). These functions describe well both the highest-intensity central part of the experimental peak and its low-intensity broadened base caused by X-ray diffuse scattering. The mean microdeformation ε and mean vertical domain size D are determined by the Williamson–Hall method for layers of GaN (ε ≈ 0.00006, D ≈ 200 nm) and Al0.32Ga0.68N (ε = 0.0032 ± 0.0005, D = 24 ± 7 nm). The D value obtained for the Al0.32Ga0.68N layer is most likely to result from the nominal thickness of this layer, which is 11 nm.
Similar content being viewed by others
References
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, and P. P. Maltsev, Semiconductors 50, 1416 (2016).
D. N. Slapovskii, A. Yu. Pavlov, V. Yu. Pavlov, and A. V. Klekovkin, Semiconductors 51, 438 (2017).
V. V. Gruzdov, Yu. V. Kolkovskii, and Yu. A. Kontsevoi, Control of New Technologies in Solid-State Microwave Electronics (Tekhnosfera, Moscow, 2016) [in Russian].
R. N. Kyutt and A. A. Dyshekov, Tech. Phys. Lett. 37, 306 (2011).
G. K. Williamson and W. H. Hall, Acta Metall. 1, 22 (1953).
V. I. Iveronova, Theory of X-Ray Scattering (Mosk. Gos. Univ., Moscow, 1978) [in Russian].
Yu. V. Ponomarchuk, Extended Abstract of Cand. Sci. (Phys. Math.) Dissertation (Kemerovo State Univ., Kemerovo, 2015).
R. Chierchia, T. Böttcher, H. Heinke, S. Einfeldt, S. Figge, and D. Hommel, J. Appl. Phys. 93, 8918 (2003).
I. S. Vasil’evskii, S. S. Pushkarev, M. M. Grekhov, A. N. Vinichenko, D. V. Lavrukhin, and O. S. Kolentsova, Semiconductors 50, 559 (2016).
Zhenyang Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R. T. Lechner, T. Roch, and G. Bauer, Appl. Phys. Lett. 80, 3521 (2002).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.S. Pushkarev, M.M. Grekhov, N.V. Zenchenko, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 6, pp. 586–590.
Rights and permissions
About this article
Cite this article
Pushkarev, S.S., Grekhov, M.M. & Zenchenko, N.V. X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method. Semiconductors 52, 734–738 (2018). https://doi.org/10.1134/S1063782618060209
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782618060209