Abstract
The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demonstrated. The characteristics of a laser heterostructure with InGaAs/GaAsP quantum wells are investigated by this technique. It is shown that photoluminescence from different layers of the structure can be recorded separately. It is established that both the frequency of the InP-like phonon mode and the photoluminescence energy can be used to determine the composition of the In x Ga1–xP alloy. The two methods yield close results.
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References
M. Arai, K. Nakashima, T. Fujisawa, T. Tadokoro, W. Kobayashi, M. Yuda, and Y. Kondo, IEEE J. Sel. Top. Quantum Electron. 15, 724 (2009).
S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, and T. Yamamoto, Appl. Phys. Lett. 84, 2533 (2004).
S. M. Plankina, O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, N. Yu. Konnova, A. V. Nezhdanov, and I. Yu. Pashen’kin, Semiconductors 50, 1539 (2016).
P. Yu and M. Cardona, Fundamentals of Semiconductor Physics (Springer, New York, 1996; Fizmatlit, Moscow, 2002), Chap. 7, rus. p.342.
H. Lee, D. Biswas, M. V. Klein, H. Morkoç, D. E. Aspnes, B. D. Choe, J. Kim, and C. O. Griffiths, J. Appl. Phys. 75, 5040 (1994).
M. Zachau and W. T. Masselink, Appl. Phys. Lett. 60, 2098 (1992).
A. V. Kudrin, S. M. Plankina, O. V. Vikhrova, A. V. Nezhdanov, A. I. Mashin, Yu. N. Drozdov, and A. V. Shvetsov, Micron 93, 38 (2017).
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, Yu. N. Drozdov, M. N. Drozdov, I. L. Kalent’eva, and A. V. Kudrin, Semiconductors 46, 1493 (2012).
A. M. Mintairov, B. N. Zvonkov, T. S. Babushkina, I. G. Malkina, and Yu. N. Saf’yanov, Phys. Solid State 37, 1985 (1995).
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Original Russian Text © S.M. Plankina, O.V. Vikhrova, B.N. Zvonkov, A.V. Nezhdanov, I.Yu. Pashen’kin, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1510–1513.
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Plankina, S.M., Vikhrova, O.V., Zvonkov, B.N. et al. Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures. Semiconductors 51, 1456–1459 (2017). https://doi.org/10.1134/S1063782617110239
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DOI: https://doi.org/10.1134/S1063782617110239