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Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell

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Abstract

A phenomenological model of double acceptors formed by Cu, Ag, and Au atoms in GaAs is presented. Experimentally observed phenomena related to the specific features of the spatial and electronic structure of these centers (the suppression of the Jahn–Teller effect by uniaxial pressure, softening of the crystal, recombination-induced reorientation of Jahn–Teller distortions of the center, the decrease in the stationary degree of alignment of center distortions by uniaxial pressure with an increase in the recombination rate of nonequilibrium electron–hole pairs through the center, the relaxation absorption of ultrasound, etc.) are described.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. A. Gutkin & N. S. Averkiev

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  1. A. A. Gutkin
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Original Russian Text © A.A. Gutkin, N.S. Averkiev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 10, pp. 1299–1324.

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Gutkin, A.A., Averkiev, N.S. Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell. Semiconductors 51, 1247–1273 (2017). https://doi.org/10.1134/S1063782617100104

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