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Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
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Abstract

Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO2 laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by A + centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, 603087, Russia

    R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, D. V. Kozlov & V. N. Shastin

  2. DLR Institute of Optical Sensor Systems, Berlin, 12489, Germany

    H.-W. Hübers

  3. Institute of Physics, Humboldt University of Berlin, Berlin, 12489, Germany

    H.-W. Hübers & N. Dessmann

  4. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, 603950, Russia

    V. N. Shastin

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  1. R. Kh. Zhukavin
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  2. K. A. Kovalevsky
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  3. M. L. Orlov
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  4. V. V. Tsyplenkov
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  5. H.-W. Hübers
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  6. N. Dessmann
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  7. D. V. Kozlov
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  8. V. N. Shastin
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Corresponding author

Correspondence to R. Kh. Zhukavin.

Additional information

Original Russian Text © R.Kh. Zhukavin, K.A. Kovalevsky, M.L. Orlov, V.V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D.V. Kozlov, V.N. Shastin, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 11, pp. 1479–1483.

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Zhukavin, R.K., Kovalevsky, K.A., Orlov, M.L. et al. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon. Semiconductors 50, 1458–1462 (2016). https://doi.org/10.1134/S1063782616110270

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