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Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer

  • Physics of Semiconductor Devices
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Abstract

The properties of protective dielectric layers of aluminum oxide Al2O3 applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al2O3 layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 1011 cm−2 at surface states. The application of a positive potential to the substrate (V sub > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. P. Popov, M. A. Ilnitskii & E. D. Zhanaev

  2. Physical Technological Institute, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117218, Russia

    A. V. Myakon’kich & K. V. Rudenko

  3. Novosibirsk Semiconductor Device Plant and Design Bureau, ul. Dachnaya 60, Novosibirsk, 630082, Russia

    A. V. Glukhov

Authors
  1. V. P. Popov
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  2. M. A. Ilnitskii
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  3. E. D. Zhanaev
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  4. A. V. Myakon’kich
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  5. K. V. Rudenko
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  6. A. V. Glukhov
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Correspondence to V. P. Popov.

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Original Russian Text © V.P. Popov, M.A. Ilnitskii, E.D. Zhanaev, A.V. Myakon’kich, K.V. Rudenko, A.V. Glukhov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 643–649.

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Popov, V.P., Ilnitskii, M.A., Zhanaev, E.D. et al. Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer. Semiconductors 50, 632–638 (2016). https://doi.org/10.1134/S1063782616050195

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  • DOI: https://doi.org/10.1134/S1063782616050195

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