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On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum

  • Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
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Abstract

The self-organized structuring of the surface of single-crystal silicon wafers under high-frequency annealing in a carbon-containing atmosphere is reported. The effect can be used to develop new maskless methods for the fabrication of structured materials for different functional purposes.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. G. Mynbaeva, S. P. Lebedev, A. A. Lavrent’ev, K. D. Mynbaev, A. A. Golovatenko, A. A. Lebedev & V. I. Nikolaev

  2. Perfect Crystals LLC, St. Petersburg, 194021, Russia

    A. A. Golovatenko & V. I. Nikolaev

  3. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg, 197101, Russia

    K. D. Mynbaev, A. A. Golovatenko & V. I. Nikolaev

Authors
  1. M. G. Mynbaeva
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  2. S. P. Lebedev
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  3. A. A. Lavrent’ev
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  4. K. D. Mynbaev
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  5. A. A. Golovatenko
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  6. A. A. Lebedev
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  7. V. I. Nikolaev
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Corresponding author

Correspondence to M. G. Mynbaeva.

Additional information

Original Russian Text © M.G. Mynbaeva, S.P. Lebedev, A.A. Lavrent’ev, K.D. Mynbaev, A.A. Golovatenko, A.A. Lebedev, V.I. Nikolaev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 3, pp. 364–368.

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Mynbaeva, M.G., Lebedev, S.P., Lavrent’ev, A.A. et al. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum. Semiconductors 48, 350–353 (2014). https://doi.org/10.1134/S106378261403018X

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  • DOI: https://doi.org/10.1134/S106378261403018X

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