Abstract
The electrical conductivity σ, Hall coefficients R, and thermopower α of Pb0.96Mn0.04Te (Te) single crystals annealed at 573 K for 120 h are investigated. It is shown that, in contrast to unannealed samples, the investigated samples exhibit n-type conductivity and metal-type dependences σ(T) in the temperature range 77–300 K. It is suggested that, upon annealing, a portion of the excess tellurium atoms occupy vacancies in the lead sublattice with the formation of new vacancies in the tellurium sublattice of the samples.
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Original Russian Text © G.Z. Bagiyeva, G.D. Abdinova, N.B. Mustafayev, D.Sh. Abdinov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 2, pp. 149–151.
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Bagiyeva, G.Z., Abdinova, G.D., Mustafayev, N.B. et al. Effect of annealing on the electrical properties of Pb1 − x Mn x Te single crystals with excess tellurium. Semiconductors 48, 139–141 (2014). https://doi.org/10.1134/S1063782614020031
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DOI: https://doi.org/10.1134/S1063782614020031