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Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The results of structural studies of nucleation mechanisms of CdTe islands on a substrate cooled to a temperature as low as 77 K are reported. Condensation curves, distribution functions, and microphotographs are presented. A model satisfactorily interpreting the revealed experimental facts from the point of view of nucleation of three-dimensional islands on a polymolecular adsorbate layer due to the relaxation of its chemical energy is suggested.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 190013, Russia

    A. P. Belyaev, V. P. Rubets, V. V. Antipov & E. O. Eremina

Authors
  1. A. P. Belyaev
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  2. V. P. Rubets
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  3. V. V. Antipov
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  4. E. O. Eremina
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Correspondence to A. P. Belyaev.

Additional information

Original Russian Text © A.P. Belyaev, V.P. Rubets, V.V. Antipov, E.O. Eremina, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 10, pp. 1348–1352.

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Belyaev, A.P., Rubets, V.P., Antipov, V.V. et al. Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate. Semiconductors 45, 1297–1300 (2011). https://doi.org/10.1134/S1063782611100046

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  • DOI: https://doi.org/10.1134/S1063782611100046

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