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Electronic states in epitaxial graphene fabricated on silicon carbide

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of ∼0.01–0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is ∼10−3–10−2 e per graphene atom.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    S. Yu. Davydov

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  1. S. Yu. Davydov
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Correspondence to S. Yu. Davydov.

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Original Russian Text © S.Yu. Davydov, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 8, pp. 1102–1108.

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Davydov, S.Y. Electronic states in epitaxial graphene fabricated on silicon carbide. Semiconductors 45, 1070–1076 (2011). https://doi.org/10.1134/S1063782611080057

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  • DOI: https://doi.org/10.1134/S1063782611080057

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