Abstract
Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm2 and thickness from 0.5 to 5 μm and hole concentration of 6.3 × 1016 cm−3 (300 K) are obtained.
Similar content being viewed by others
References
S. H. Demtsu and J. R. Sites, Thin Sol. Films 510, 320 (2006).
Chunliang Li and Norio Murase, Chem. Lett. 34, 92 (2005).
N. A. Babaev and V. S. Bagaev, Pis’ma Zh. Éksp. Teor. Fiz. 37, 524 (1983) [JETP Lett. 37, 624 (1983)].
N. H. Karam, R. G. Wolfson, I. B. Bhat, H. Ehsani, and S. K. Ghandi, Thin Sol. Films 225, 261 (1993).
V. B. Aleksovskii, Doctoral Dissertation (Tekhnologich. Inst., Leningrad, 1952).
Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, and S. Rumyantsev, and M. Shur (World Sci., Singapore, New York, London, Hong Kong, 1996), vol. 1.
Handbook Series on Semiconductor Parameters, Ed. by M. Levinshtein, and S. Rumyantsev, and M. Shur (World Sci., Singapore, New York, London, Hong Kong, 1996), vol. 4.
Physical Quantities, A Handook, Ed. by I. S. Grigor’ev and E. Z. Meilikhov (Énergoizdat, Moscow, 1992) [in Russian].
Physics of II-VI Compounds, Ed. by A. N. Georgobiani and M. K. Sheinkman (Nauka, Moscow, 1986) [in Russian].
Yu. Ya. Gurevich and Yu. V. Pleskov, Photoelectrochemistry of Semiconductors (Nauka, Moscow, 1983) [in Russian].
P. P. Konorov and A. M. Yafyasov, Physics of the Surface of Semiconductor Electrodes (SPb. Gos. Univ., St.-Petersburg, 2003) [in Russian].
Powder Diffraction File—Release 2006 (ICCD), PDF no. 15-770.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.A. Mayorov, A.M. Yafaysov, V.B. Bogevolnov, V.F. Radanstev, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 5, pp. 590–593.
Rights and permissions
About this article
Cite this article
Mayorov, V.A., Yafaysov, A.M., Bogevolnov, V.B. et al. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition. Semiconductors 44, 564–567 (2010). https://doi.org/10.1134/S1063782610050039
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782610050039