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Electroplasticity of undoped and doped silicon

  • Atomic Structure and Nonelectronic Propertties of Semiconductors
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Abstract

A new technology of formation of dislocation dissipative structures in undoped and doped semi-conductor crystals by the combined deformation, which makes it possible to control their elastoplastic properties, is suggested. New macroplastic properties of these crystals are found. From the obtained compression diagrams, various strain parameters are determined and surface microstructures of the obtained deformed samples are investigated. Possible physical explanations are proposed for the observed phenomenon.

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Authors and Affiliations

  1. Russian Academy of Sciences, ul. 26 Bakinskikh Komissarov 94, Makhachkala, 367003, Dagestan, Russia

    A. R. Velikhanov

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  1. A. R. Velikhanov
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Correspondence to A. R. Velikhanov.

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Original Russian Text © A.R. Velikhanov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 2, pp. 145-148.

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Velikhanov, A.R. Electroplasticity of undoped and doped silicon. Semiconductors 44, 137–140 (2010). https://doi.org/10.1134/S1063782610020016

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  • DOI: https://doi.org/10.1134/S1063782610020016

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