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The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes

  • Physics of Semiconductor Devices
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Abstract

Simulation of multicomponent AlInGaN-based heterostructures for their use in light-emitting diodes is performed. The effect of nonuniform distribution of In atoms in the light-emitting “nanodiodes” on the working characteristics of the device in general are determined. A model describing the structure of multicomponent AlInGaN heterostructures for light-emitting diodes is developed.

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Authors and Affiliations

  1. Institute of Physical Chemistry of Materials, Moscow Institute of Steel and Alloys (State Technical University), Leninskii pr. 4, Moscow, 119 049, Russia

    O. I. Rabinovich & V. P. Sushkov

Authors
  1. O. I. Rabinovich
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  2. V. P. Sushkov
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Correspondence to O. I. Rabinovich.

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Original Russian Text © O.I. Rabinovich, V.P. Sushkov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 548–551.

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Rabinovich, O.I., Sushkov, V.P. The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes. Semiconductors 43, 524–527 (2009). https://doi.org/10.1134/S1063782609040228

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  • DOI: https://doi.org/10.1134/S1063782609040228

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