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Drift velocity of electrons in quantum wells in high electric fields

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Abstract

It is experimentally found that the maximum drift velocity of electrons in quantum wells of differently arranged AlGaAs/GaAs heterostructures and pseudoamorphous Al0.36Ga0.64As/In0.15Ga0.85 As heterostructures is higher than the maximum drift velocity of electrons in bulk materials. It is established that no negative differential conductivity is exhibited by the field dependence of the drift velocity of two-dimensional electrons in GaAs and In0.15Ga0.85As. The drift velocity in the GaAs quantum well is saturated in fields several times higher than the field corresponding to the Γ-L intervalley transitions of electrons in bulk GaAs.

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Authors and Affiliations

  1. Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    V. G. Mokerov, I. S. Vasil’evskii & G. B. Galiev

  2. Semiconductor Physics Institute, Vilnius, 01108, Lithuania

    J. Požela, K. Požela, A. Sužiedėlis, V. Jucienė & Č. Paškević

Authors
  1. V. G. Mokerov
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  2. I. S. Vasil’evskii
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  3. G. B. Galiev
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  4. J. Požela
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  5. K. Požela
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  6. A. Sužiedėlis
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  7. V. Jucienė
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  8. Č. Paškević
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Corresponding author

Correspondence to J. Požela.

Additional information

Original Russian Text © V.G. Mokerov, I.S. Vasil’evskii, G.B. Galiev, J. Požela, K. Požela, A. Sužiedėlis, V. Jucienė, Č Paškevič, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 4, pp. 478–482.

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Mokerov, V.G., Vasil’evskii, I.S., Galiev, G.B. et al. Drift velocity of electrons in quantum wells in high electric fields. Semiconductors 43, 458–462 (2009). https://doi.org/10.1134/S1063782609040095

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  • DOI: https://doi.org/10.1134/S1063782609040095

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