Abstract
Effect of irradiation with γ-ray photons on the mechanism of charge transport in an n-CdS/p-CdTe heterostructure is considered. It is shown that the forward current-voltage characteristic of an n-CdS/p-CdTe heterostructure before and after irradiation is described by two exponential dependences: I = I 01exp(qV/C 01 kT) and I = I 02exp(qV/C 02 kT). It is found that, in the first portion of the current-voltage characteristic, the current is limited by thermoelectronic emission while, in the second portion, the current is limited by recombination of nonequilibrium charge carriers in the electrically neutral portion of a CdTe1 − x S x alloy at the n-CdS/p-CdTe heteroboundary. Anomalous dose dependences of parameters of the n-CdS/p-CdTe heterosystem are attributed to a variation in the degree of compensation of local centers at the CdS-CdTe1 − x S x interface and in the CdTe1 − x S x layers in relation to the dose of irradiation with γ-ray photons.
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Original Russian Text © S.A. Muzafarova, S.A. Mirsagatov, F.N. Dzhamalov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 2, pp. 187–192.
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Muzafarova, S.A., Mirsagatov, S.A. & Dzhamalov, F.N. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures. Semiconductors 43, 175–180 (2009). https://doi.org/10.1134/S1063782609020109
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DOI: https://doi.org/10.1134/S1063782609020109