Abstract
Results of experimental study of decay of the current flowing through a thin-film electroluminescent MISIM structure indicate a bimolecular process of electron capture by the surface states of the anode interface. A two-stage model of the process is suggested. At the first stage, the impact Auger capture of hot electrons takes place. At the second stage, upon varying the field direction, the holes of the valence band generated due to tunnel emission from deep centers drift to this interface, where they recombine with electrons of deepest occupied surface states. The electron lifetime and rate of the surface capture of electrons as well as their dependences on excitation parameters are determined. The behavior of the time dependence of the instant internal quantum yield at the decay portion is interpreted.
Similar content being viewed by others
References
E. Bringuier, J. Appl. Phys. 66, 1314 (1989).
V. P. Singh, S. Krishna, and D. C. Morton, J. Appl. Phys. 70, 1811 (1991).
N. T. Gurin, A. V. Shlyapin, and O. Yu. Sabitov, Zh. Tekh. Fiz. 72(2), 74 (2002) [Tech. Phys. 47, 215 (2002)].
N. T. Gurin, A. V. Shlyapin, and O. Yu. Sabitov, Zh. Tekh. Fiz. 73, 100 (2003) [Tech. Phys. 48, 479 (2003)].
N. T. Gurin, A. M. Afanas’ev, O. Yu. Sabitov, and D. V. Ryabov, Fiz. Tekh. Poluprovodn. 40, 949 (2006) [Semiconductors 40, 920 (2006)].
K. A. Neyts and P. De Visschere, J. Appl. Phys. 68, 4163 (1990).
J. C. Hitt, P. D. Keir, J. F. Wager, and S. S. Sun, J. Appl. Phys. 83, 1141 (1998).
N. T. Gurin, O. Yu. Sabitov, and A. M. Afanas’ev, Fiz. Tekh. Poluprovodn. 41, 1168 (2007) [Semiconductors 41, 1150 (2007)].
N. T. Gurin, O. Yu. Sabitov, and A. V. Shlyapin, Zh. Tekh. Fiz. 71(8), 48 (2001) [Tech. Phys. 46, 977 (2001)].
E. Bringuier, Philos. Mag. B 75, 209 (1997).
P. D. Keir, C. Maddix, B. A. Baukol, et al., J. Appl. Phys. 86, 6810 (1999).
A. V. Rzhanov. Electron Processes on Semiconductors’ Surface (Nauka, Moscow, 1971) [in Russian].
V. A. Zuev, A. V. Sachenko, and K. B. Tolpygo, Nonequilibrium Processes in Semiconductor Devices (Sov. Radio, Moscow, 1977) [in Russian].
N. T. Gurin and O. Yu. Sabitov, Zh. Tekh. Fiz. 76(8), 50 (2006) [Tech. Phys. 51, 1012 (2006)].
K. A. Neyts, D. Sorlatan, P. De Visschere, and J. Van der Bossche, J. Appl. Phys. 75, 5339 (1994).
N. T. Gurin, A. V. Shlyapin, O. Yu. Sabitov, and D. V. Ryabov, Zh. Tekh. Fiz. 73(4), 90 (2003) [Tech. Phys. 48, 469 (2003)].
N. T. Gurin and D. V. Ryabov, Zh. Tekh. Fiz. 75(1), 45 (2005) [Tech. Phys. 50, 44 (2005)].
S. M. Ryvkin, Photoelectric Effects in Semiconductors (Fizmatgiz, Leningrad, 1963; Consultants Bureau, New York, 1964).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.T. Gurin, O.Yu. Sabitov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 6, pp. 692–705.
Rights and permissions
About this article
Cite this article
Gurin, N.T., Sabitov, O.Y. Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off. Semiconductors 42, 675–688 (2008). https://doi.org/10.1134/S1063782608060080
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782608060080