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Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Results of experimental study of decay of the current flowing through a thin-film electroluminescent MISIM structure indicate a bimolecular process of electron capture by the surface states of the anode interface. A two-stage model of the process is suggested. At the first stage, the impact Auger capture of hot electrons takes place. At the second stage, upon varying the field direction, the holes of the valence band generated due to tunnel emission from deep centers drift to this interface, where they recombine with electrons of deepest occupied surface states. The electron lifetime and rate of the surface capture of electrons as well as their dependences on excitation parameters are determined. The behavior of the time dependence of the instant internal quantum yield at the decay portion is interpreted.

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Correspondence to N. T. Gurin.

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Original Russian Text © N.T. Gurin, O.Yu. Sabitov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 6, pp. 692–705.

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Gurin, N.T., Sabitov, O.Y. Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off. Semiconductors 42, 675–688 (2008). https://doi.org/10.1134/S1063782608060080

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  • DOI: https://doi.org/10.1134/S1063782608060080

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