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Two-band combined model of a resonant tunneling diode

  • Physics of Semiconductor Devices
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Abstract

A two-band combined model of a resonant tunneling diode, based on the semiclassical and quantum mechanical (the wave function formalism) approaches is proposed. The main specific feature of this model is the possibility of taking into account the interaction between different classical or quantum mechanical device regions with simultaneous consideration of the Γ-X intervalley scattering. It is shown that this model gives satisfactory agreement with the experimental data on the current-voltage characteristics and allows explanation of the plateau region in these characteristics within the stationary model.

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Authors and Affiliations

  1. Belarussian State University of Informatics and Radioelectronics, ul. Brovki 17, Minsk, 220013, Belarus

    I. I. Abramov, I. A. Goncharenko & N. V. Kolomeitseva

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  1. I. I. Abramov
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  2. I. A. Goncharenko
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  3. N. V. Kolomeitseva
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Correspondence to I. I. Abramov.

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Original Russian Text © I.I. Abramov, I.A. Goncharenko, N.V. Kolomeitseva, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 11, pp. 1395–1400.

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Abramov, I.I., Goncharenko, I.A. & Kolomeitseva, N.V. Two-band combined model of a resonant tunneling diode. Semiconductors 41, 1375–1380 (2007). https://doi.org/10.1134/S106378260711019X

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  • DOI: https://doi.org/10.1134/S106378260711019X

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