Abstract
Silicon p +-n junction diodes irradiated with 3.5-MeV electrons (with the dose of 4 × 1016 cm−2) are studied. The diodes’ inductance (L) was measured at a frequency f = 1 MHz with the amplitude of alternating current equal to 0.25 mA. Simultaneously with measurements of L at alternating current, a direct current was passed through the forward-biased diode, which brought about the injection of minority charge carriers into the base. In order to identify both of the mechanisms that give rise to the inductive-type impedance in irradiated diodes with the p +-n junction and the main radiation defects that are directly involved in the formation of this impedance, irradiated samples were annealed isochronously in the temperature range T a = 225–375°C with sub-sequent study of the main characteristics of the defects by deep-level transient spectroscopy. It is shown that the inductive-type impedance in irradiated diodes is caused by the processes of capture and retention of charge carriers injected into the base at the trapping centers for a time ∼1/2f, i.e., for a half-period of oscillations. It is also shown that the trapping centers are the vacancy-oxygen complexes introduced by irradiation with electrons.
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Original Russian Text © N.A. Poklonski, S.V. Shapakovski, N.I. Gorbachuk, S.B. Lastovskii, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 7, pp. 824–828.
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Poklonski, N.A., Shpakovski, S.V., Gorbachuk, N.I. et al. Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons. Semiconductors 40, 803–807 (2006). https://doi.org/10.1134/S1063782606070128
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DOI: https://doi.org/10.1134/S1063782606070128