Abstract
The growth of a dislocation-free thin film deposited on a solid surface from a gaseous phase is treated theoretically. The most commonly encountered process in which the growth follows the two-dimensional mechanism and each succeeding layer is formed on the covered areas of the preceding layer is considered. A self-consistent kinetic model of the film formation is developed. If the energy parameters of the system and the conditions of growth are known, the model makes it possible to calculate the structural characteristics of the system at the different stages of growth. The size distribution function of islands at the stage of their separate growth, the perimeter of the layer boundary, the coverage of the surface at the stage of continuous layer formation, and the average height, as well as other parameters of the surface roughness of the three-dimensional film are determined. The algorithm of numerical calculations and the examples of the calculations for some model systems are presented. The results can be used for the control and optimization of growth in various technological procedures of thin film deposition.
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Original Russian Text © V.G. Dubrovskiĭ, N.V. Sibirev, G.E. Cirlin, V.M. Ustinov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 3, pp. 257–263.
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Dubrovskiĭ, V.G., Sibirev, N.V., Cirlin, G.E. et al. The theory of the formation of multilayered thin films on solid surfaces. Semiconductors 40, 249–256 (2006). https://doi.org/10.1134/S1063782606030018
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DOI: https://doi.org/10.1134/S1063782606030018