Abstract
The structural features induced by twinning in tin- and tellurium-doped gallium arsenide crystals during their growth by the Czochralski method with liquid melt sealing by boric anhydride have been considered. It is shown that growth twins and edge facets arise at the crystal periphery in the region of supercooled melt. The dopant concentration near a twin is always higher than in the region free of twins. A change is observed in the dislocation-growth direction in crystal during twinning.
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† Deceased.
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ACKNOWLEDGMENTS
We are grateful to V.F. PavlovFootnote 1 and V.N. Chernov for their help.
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Translated by Yu. Sin’kov
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Yugov, A.A., Pugachev, B.V., Yugova, T.G. et al. Structural Features Associated with Twinning in the Growth of Gallium Arsenide Single Crystals by the Czochralski Method. Crystallogr. Rep. 65, 832–835 (2020). https://doi.org/10.1134/S1063774520060413
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DOI: https://doi.org/10.1134/S1063774520060413