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Study of the solid-state amorphization of (GaSb)1 − x Ge x semiconductors by real-time neutron diffraction and electron microscopy

  • Lattice Dynamics and Phase Transitions
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Abstract

The spontaneous amorphization of high-pressure quenched phases of the GaSb-Ge system has been studied by neutron diffraction while slowly heating the phases at atmospheric pressure. The sequence of changes in the structural parameters of the initial crystalline phase and the final amorphous phase is established. The behavior of the phases and the correlation in the structural features of the phase transitions and anomalous thermal effects exhibit signs of the inhomogeneous model of solid-state amorphization.

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Authors and Affiliations

  1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    V. K. Fedotov & E. G. Ponyatovsky

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  1. V. K. Fedotov
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  2. E. G. Ponyatovsky
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Correspondence to V. K. Fedotov.

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Fedotov, V.K., Ponyatovsky, E.G. Study of the solid-state amorphization of (GaSb)1 − x Ge x semiconductors by real-time neutron diffraction and electron microscopy. Crystallogr. Rep. 56, 1155–1159 (2011). https://doi.org/10.1134/S1063774511070121

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  • DOI: https://doi.org/10.1134/S1063774511070121

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