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Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS Transistors

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Abstract

Physical models of MOS transistors used in the design of modern integrated circuits are typically accurate, which makes it possible to model their operation with a specified degree of reliability. However, they are also highly complex, which makes them impractical to use when analyzing and predicting the operation of designed devices. Therefore, less accurate, but more compact analytical models of transistors and devices based on them are usually used for estimation and prediction. At the same time, for calculations and estimations, the values of all parameters contained in the model equations cannot be always known sufficiently accurately. In the paper, using the example of a previously developed analytical model of a voltage multiplier and the results of modeling a voltage multiplier developed using 180-nm CMOS technology, we present a method for refining the parameter values of analytical models describing devices based on integrated MOS transistors.

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REFERENCES

  1. Dabhi, C.K., Dasgupta, A., Agrawal, H., Paydavosi, N., Morshed, T.H., Lu, D.D., Yang, W., Dunga, M.V., Xi, X., He, J., Liu, W., Kanyu, Cao, M., Jin, X., Ou, J.J., and Chan, M., BSIM4 4.8.2 MOSFET Model, Berkeley: Univ. California, 2020.

    Google Scholar 

  2. Custom IC / Analog / RF Design Cadence Design Systems. http://www.cadence.com/en_US/home/tools/ custom-ic-analog-rf-design.html. Accessed June 9, 2022.

  3. Sinyukin, A.S. and Konoplev, B.G., Integrated CMOS microwave power converter for passive wireless devices, Russ. Microelectron., 2021, vol. 50, no. 3, pp. 219–227.

    Article  Google Scholar 

  4. Konoplev, B.G. and Sinyukin, A.S., Voltage multiplier for low power applications, RF Patent 199930, 2020117338, Byull. Izobret., 2020, no. 28.

  5. Enz, C.C. and Vittoz, E.A., Charge-Based MOS Transistor Modeling, Chichester, West Sussex: Wiley, 2006.

    Book  Google Scholar 

  6. Dickson, J.F., On-chip high-voltage generation in MNOS integrated circuits using an improved multiplier technique, IEEE J. Solid-State Circuits, 1976, vol. 11, no. 3, pp. 374–378.

    Article  Google Scholar 

  7. Taghadosi, M., Albasha, L., Quadir, N.A., Rahama, Y.A., and Qaddoumi, N., High efficiency energy harvesters in 65 nm CMOS process for autonomous IoT sensor applications, IEEE Access, 2018, vol. 6, pp. 2397–2409.

    Article  Google Scholar 

  8. Zhang, G., Wu, D., Jia, J., Gao, W., Cai, Q., Xiao, W., Yu, L., Tao, S., and Chu, Q., Architecture characteristics and technical trends of UHF RFID temperature sensor chip, Active Passive Electron. Compon., 2018, vol. 2018, pp. 9343241-1–8.

  9. Sung, G.-M., Chou, H.-Y., and Chen, Z.-W., Radio frequency energy harvesting IC for ISM-915 MHz and 2.45 GHz wireless transmitter, in Proceedings of the 2021 IEEE International Future Energy Electronics Conference (IFEEC), Taipei, 2021, pp. 1–5.

  10. De Souza, C.P., Villarim, A.W.R., and Baiocchi, O., A 20 mV rectifier for boosting internet of natural things (IoNT), in Proceedings of the 2018 IEEE 9th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON), Vancouver, 2018, pp. 401–405.

  11. Swangpattaraphon, N. and The, Y.-K., Design consideration of 433.92 MHz ISM band RF rectifier for wireless IoT cloud application, in Proceedings of the 2019 IEEE 9th Annual Computing and Communication Workshop and Conference (CCWC), Las Vegas, 2019, pp. 685–689.

  12. Guler, U., Jia, Y., and Ghovanloo, M., A reconfigurable passive voltage multiplier for wireless mobile IoT applications, IEEE Trans. Circuits Syst. II: Express Briefs, 2020, vol. 67, no. 4, pp. 615–619.

    Article  Google Scholar 

  13. Beriain, A., Solar, H., Duroc, Y., and Tedjini, S., UHF RFID voltage multiplier design from a harmonic communication perspective, in Proceedings of the 2021 34th General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS), Rome, 2021, pp. 1–4.

  14. Wagih, M., Savanth, A., Gamage, S., Weddell, A.S., and Beeby, S., CMOS UHF RFID rectifier design and matching: An analysis of process and temperature variations, in Proceedings of the 2021 IEEE International Conference on RFID Technology and Applications (RFID-TA), Delhi, 2021, pp. 271–274.

  15. Chun, A.C.C., Ramiah, H., and Mekhilef, S., Wide power dynamic range CMOS RF-DC rectifier for RF energy harvesting system: A review, IEEE Access, 2022, vol. 10, pp. 23948–23963.

    Article  Google Scholar 

  16. Takacs, A., Okba, A., Aubert, H., Charlot, S., and Calmon, P.-F., Recent advances in electromagnetic energy harvesting and wireless power transfer for IoT and SHM applications, in Proceedings of the 2017 IEEE International Workshop of Electronics, Control, Measurement, Signals and their Application to Mechatronics (ECMSM), Donostia, 2017, pp. 1–4.

  17. Li, P., Long, Z., and Yang, Z., RF energy harvesting for batteryless and maintenance-free condition monitoring of railway tracks, IEEE Internet Things J., 2021, vol. 8, no. 5, pp. 3512–3523.

    Article  Google Scholar 

  18. Snyman, J.A. and Wilke, D.N., Practical Mathematical Optimization: Basic Optimization Theory and Gradient-Based Algorithms, Berlin: Springer, 2018, 2nd ed.

    Book  MATH  Google Scholar 

  19. Reynders, N. and Dehaene, W., Ultra-Low-Voltage Design of Energy-Efficient Digital Circuits, Cham: Springer, 2015.

    Book  Google Scholar 

  20. Baker, R.J., CMOS: Circuit Design, Layout, and Simulation, Hoboken, NJ: Wiley, 2010.

    Book  Google Scholar 

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ACKNOWLEDGMENTS

When performing the work, software and hardware tools of the Central Collective Use Center “Microsystem Technology and Electronic Component Base,” National Research University of Electronic Technology (MIET) were used.

Funding

This study was supported as part of the “Development and research of methods and tools for monitoring, diagnosing, and predicting the state of engineering objects based on artificial intelligence” project, task no. FENW-2020-0022, work no. LAB0110/2020-01DC in Southern Federal University).

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Authors and Affiliations

  1. Design Center for the Microelectronic Component Base for Artificial Intelligence Systems, Southern Federal University, 347922, Taganrog, Rostov oblast, Russia

    A. S. Sinyukin & A. V. Kovalev

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  1. A. S. Sinyukin
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  2. A. V. Kovalev
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Correspondence to A. S. Sinyukin or A. V. Kovalev.

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The authors declare that they have no conflicts of interest.

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Translated by A. Ivanov

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Sinyukin, A.S., Kovalev, A.V. Method for the Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Based on Integrated MOS Transistors. Russ Microelectron 51, 398–403 (2022). https://doi.org/10.1134/S1063739722700056

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  • DOI: https://doi.org/10.1134/S1063739722700056

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