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Electromagnetic Modeling of a Monolithic Microwave Integrated Circuit Attenuator on AlGaN/GaN Heterostructures

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Abstract

The features of the electromagnetic simulation of an SSI microwave 5-bit attenuator for the 5–15 GHz frequency range on AlGaN/GaN heterostructures are reviewed. The implementation of the device envisages the use of contacts with capacitive coupling. Attenuator provides 1, 2, 4, 8 and 16 dB attenuation in the 5 to 15 GHz bandwidth and control of the signal’s amplitude in the range from 0 to 31 dB in 1 dB steps and initial losses of up to 5 dB.

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Authors and Affiliations

  1. AO NPP Pulsar, 105187, Moscow, Russia

    A. S. Adonin, A. Yu. Evgrafov, Yu. V. Kolkovskii & V. M. Minnebaev

  2. MIREA, Russian Technological University, 119454, Moscow, Russia

    A. S. Adonin, Yu. V. Kolkovskii & V. M. Minnebaev

Authors
  1. A. S. Adonin
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  2. A. Yu. Evgrafov
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  3. Yu. V. Kolkovskii
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  4. V. M. Minnebaev
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Correspondence to A. S. Adonin.

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Adonin, A.S., Evgrafov, A.Y., Kolkovskii, Y.V. et al. Electromagnetic Modeling of a Monolithic Microwave Integrated Circuit Attenuator on AlGaN/GaN Heterostructures. Russ Microelectron 50, 197–205 (2021). https://doi.org/10.1134/S1063739721020025

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  • DOI: https://doi.org/10.1134/S1063739721020025

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