Skip to main content
Log in

Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

In this paper, we study the radiation-induced processes occurring during the implantation of antimony ions into films of the positive diazoquinone-novolac (DQN) FP9120 photoresist (PR) on silicon by the Fourier-transform infrared (FTIR) spectroscopy of the frustrated total internal reflection (TIR). Ion implantation (II) is found to lead to the appearance in the frustrated TIR spectrum of a band at 2331 cm–1 caused by the O=C=O stretching vibrations. The violation of adhesion at the PR/silicon interface manifests itself in the appearance of a 610 cm–1 band related to the absorption of the Si lattice. The formation of new C–O–C bonds because of the ether cross links of ketene with the OH group of novolac resin is found.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.

Similar content being viewed by others

REFERENCES

  1. Martins, J.S., Borges, D.G.A.L., Machado, R.C., Carpanez, A.G., Grazul, R.M., Zappa, F., Melo, W.S., Rocco, M.L.M., Pinho, R.R., and Lima, C.R.A., Evaluation of chemical kinetics in positive photoresists using laser desorption ionization, Eur. Polym. J., 2014, vol. 59, pp. 1–7.

    Article  Google Scholar 

  2. Debmalya, R., Gandhi, A., Basu, P.K., Eswaran, S.V., and Raghunathan, P., Optimization of monomer content and degree of linearity in lithographically interesting novolac copolymers using NMR spectroscopy, Microelectron. Eng., 2003, vol. 70, no. 1, pp. 58–72.

    Article  Google Scholar 

  3. Lebedev, V.I., Kotomina, V.E., Zelentsov, S.V., Leonov, E.S., and Sidorenko, K.V., The influence of intermolecular hydrogen bonds on photoresist mask properties, Vestn. Nizhegor. Univ., Khim., 2014, no. 4 (1), pp. 178–182.

  4. Moreau, W.M., Semiconductor Lithography. Principles, Practices and Materials, New York, London: Plenum, 1988.

    Book  Google Scholar 

  5. Brinkevich, D.I., Brinkevich, S.D., Vabishchevich, N.V., Odzhaev, V.B., and Prosolovich, V.S., Ion implantation of positive photoresists, Russ. Microelectron., 2014, vol. 43, no. 3, pp. 194–200.

    Article  Google Scholar 

  6. Vasilevich, V.P., Kisel’, A.M., Medvedeva, A.B., Plebanovich, V.I., and Rodionov, Yu.A., Khimicheskaya obrabotka v tekhnologii IMS (Chemical Processing in Integrated Circuit Technology), Polotsk: Polots. Gos. Univ., 2001.

  7. Kharchenko, A.A., Brinkevich, D.I., Brinkevich, S.D., Lukashevich, M.G., and Odzhaev, V.B., Modification of the subsurface layers of polyimide films upon boron-ion implantation, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2015, vol. 9, no. 1, pp. 87–91.

    Article  Google Scholar 

  8. Vabishchevich, S.A., Brinkevich, S.D., Brinkevich, D.I., and Prosolovich, V.S., Adhesion of diazoquinone–novolac photoresist films implanted with boron and phosphorus ions to single-crystal silicon, High Energy Chem., 2020, vol. 54, no. 1, pp. 46–50.

    Article  Google Scholar 

  9. Brinkevich, D.I., Kharchenko, A.A., Brinkevich, S.D., Lukashevich, M.G., Odzhaev, V.B., Valeev, V.F., Nuzhdin, V.I., and Khaibullin, R.I., Radiation-induced modification of reflection spectra beyond the ion path region in polyimide films, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2017, vol. 11, no. 4, pp. 801–806.

    Article  Google Scholar 

  10. Bocker, J., Spektroskopie, Wurzburg, Germany: Vogel Industrie Medien, 1997.

    Google Scholar 

  11. Brinkevich, D.I., Kharchenko, A.A., Prosolovich, V.S., Odzhaev, V.B., Brinkevich, S.D., and Yankovskii, Yu.N., Reflection spectra modification of diazoquinone-novolak photoresist implanted with B and P ions, Russ. Microelectron., 2019, vol. 48, no. 3, pp. 197–201.

    Article  Google Scholar 

  12. Fiziko-khimicheskie svoistva poluprovodnikovykh veshchestv. Spravochnik (Physicochemical Properties of Semiconductor Substances, The Handbook), Moscow: Nauka, 1979, p. 13.

  13. Tarasevich, B.N., IK spektry osnovnykh klassov organi-cheskikh soedinenii. Spravochnye materialy (IR Spectra of the Main Classes of Organic Compounds. Reference Materials), Moscow: MGU, 2012.

  14. Pretsch, E., Bühlmann, F., and Affolter, C., Structure Determination of Organic Compounds: Tables of Spectral Data, Berlin Heidelberg: Springer, 2000.

    Book  Google Scholar 

  15. Pikaev, A.K., Sovremennaya radiatsionnaya khimiya: Radioliz gazov i zhidkostei (Modern Radiation Chemistry: Radiolysis of Gases and Liquids), Moscow: Nauka, 1986.

  16. Pankove, J.I., Optical Processes in Semiconductors, Englewood Cliffs, NJ: Prentice-Hall, 1971.

    Google Scholar 

  17. Kharchenko, A.A., Brinkevich, D.I., Prosolovich, V.S., Brinkevich, S.D., Odzhaev, V.B., and Yankovskii, Yu.N., Radiation-stimulated transformation of the reflectance spectra of diazoquinone-novolac photoresist films implanted with antimony ions, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2020, vol. 14, no. 3, pp. 558–557.

    Article  Google Scholar 

  18. Brinkevich, S.D., Grinyuk, E.V., Brinkevich, D.I., Sverdlov, R.L., Prosolovich, V.S., and Pyatlitskii, A.N., Mechanism of the adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon, J. Appl. Spec., 2020, vol. 87, no. 4, рр. 647–651.

  19. Poljansek, I., Sebenik, U., and Krajnc, M., Characterization of phenol-urea-formaldehyde resin by inline FTIR spectroscopy, J. Appl. Polym. Sci., 2006, vol. 99, pp. 2016–2028.

    Article  Google Scholar 

  20. Belkov, M.V., Brinkevich, S.D., Samovich, S.N., Skornyakov, I.V., Tolstorozhev, G.B., and Shadyro, O.I., Infrared spectra and structure of molecular complexes of aromatic acids, J. Appl. Spectrosc., 2011, vol. 78, no. 6, pp. 794–801.

    Article  Google Scholar 

  21. Tolstorozhev, G.B., Skornyakov, I.V., Bel’kov, M.V., Shadyro, O.I., Brinkevich, S.D., and Samovich, S.N., IR spectra of benzaldehyde and its derivatives in different aggregate states, Opt. Spektrosk., 2012, vol. 113, no. 2, pp. 179–183.

    Article  Google Scholar 

  22. Tolstorozhev, G.B., Skornyakov, I.V., Bel’kov, M.V., Shadyro, O.I., Brinkevich, S.D., and Samovich, S.N., Hydrogen bonds and antiviral activity of benzaldehyde derivatives, J. Appl. Spectrosc., 2012, vol. 79, no. 4, pp. 645–650.

    Article  Google Scholar 

  23. Oleshkevich, A.N., Lapchuk, N.M., Odzhaev, V.B., Karpovich, I.A., Prosolovich, V.S., Brinkevich, D.I., and Brinkevich, S.D., Electronic conductivity in a P+-ion implanted positive photoresist, Russ. Microelectron., 2020, vol. 49, no. 1, pp. 55–61.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding authors

Correspondence to D. I. Brinkevich or V. S. Prosolovich.

Additional information

Translated by A. Ivanov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Brinkevich, S.D., Brinkevich, D.I. & Prosolovich, V.S. Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions. Russ Microelectron 50, 33–38 (2021). https://doi.org/10.1134/S1063739720060025

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739720060025

Keywords:

Navigation