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A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode

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Abstract

The dependence of the thermal characteristics of TVS-diodes during the passage of the pulse overload has been studied. The time dependences of the pulse voltage limitation and current are analyzed. Based on the analysis of the dependences, the thermal characteristics of the TVS-diode are calculated. It is shown that the parameters of the TVS-diodes deteriorate on reaching a current density of 160–300 A/cm2 and critical temperature of 250–300°С. The dependences of the thermal resistance and critical temperature of the TVS-diodes on the current density and the pulse duration are presented.

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Authors and Affiliations

  1. Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics, Moscow, 115054, Russia

    F. I. Grigoriev & A. B. Aleksandrova

  2. Dukhov All-Russian Research Institute of Automatics, Moscow, 101000, Russia

    V. A. Gafurov

Authors
  1. F. I. Grigoriev
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  2. A. B. Aleksandrova
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  3. V. A. Gafurov
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Corresponding author

Correspondence to A. B. Aleksandrova.

Additional information

Original Russian Text © F.I. Grigoriev, A.B. Aleksandrova, V.A. Gafurov, 2015, published in Izvestiya Vysshikh Uchebnykh Zavedenii, Elektronika, 2015, Vol. 20, No. 3, pp. 239–245.

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Grigoriev, F.I., Aleksandrova, A.B. & Gafurov, V.A. A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode. Russ Microelectron 45, 469–473 (2016). https://doi.org/10.1134/S1063739716070064

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  • DOI: https://doi.org/10.1134/S1063739716070064

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