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Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy

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Abstract—

Resistive switching in thin (5–10 nm) ZrO2(Y) films with Au nanoparticles is studied via tunneling atomic force microscopy. Regions of negative differential resistance are observed in the current–voltage curves of individual filaments formed under the probe potential. Their emergence is attributed to resonant electron tunneling through size-quantized electronic states with a discrete energy spectrum in Au nanoparticles embedded in the filaments.

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ACKNOWLEDGMENTS

This work was supported by the Government of the Russian Federation (grant no. 14.Y26.31.0021). The tunneling AFM measurements were performed using equipment of the Center for Shared Use “Physics of Solid Nanostructures” (Lobachevsky Nizhny Novgorod State University).

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Authors and Affiliations

  1. Lobachevsky Nizhny Novgorod State University, 603950, Nizhny Novgorod, Russia

    D. O. Filatov, I. A. Kazantseva, D. A. Antonov, I. N. Antonov, M. E. Shenina & O. N. Gorshkov

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  1. D. O. Filatov
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  2. I. A. Kazantseva
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  3. D. A. Antonov
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  4. I. N. Antonov
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  5. M. E. Shenina
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  6. O. N. Gorshkov
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Correspondence to D. O. Filatov.

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Translated by O. Maslova

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Filatov, D.O., Kazantseva, I.A., Antonov, D.A. et al. Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy. J. Surf. Investig. 13, 23–29 (2019). https://doi.org/10.1134/S1027451019010063

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