Skip to main content
SpringerLink
Log in

Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon

  • Published:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

The presented results characterize nanoparticle formation in n-Si(100) samples implanted with 50-keV 64Zn+ ions (the dose is 5 × 1016 cm‒2) at room temperature followed by heat treatment in an oxygen or nitrogen atmosphere at temperatures of 400–900°C. Defects and zinc concentration profiles are investigated via the Rutherford backscattering spectroscopy with the help of the channeling technique, in which 1.7-MeV He+ ions are scattered at an angle of 110°. The silicon surface layer is visualized using a transmission electron microscope equipped with an energy-dispersive microanalyzer. The surface topology of the implanted and annealed samples is studied via atomic-force microscopy. The implantation process is accompanied by the formation of a 150-nm-thick amorphous Si surface layer containing Zn nanoparticles with an average size of 4 nm, below which a radiation-damaged layer 50 nm thick is generated. After 800°C annealing in an oxygen atmosphere, a recrystallized single-crystal silicon layer with a complex ZnO/Zn2SiO4 phase is formed. After 800°C annealing in a nitrogen atmosphere, a recrystallized polycrystalline Si layer involving Zn nanoparticles is created.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Metal Oxide Nanostructures and Their Applications, Ed. by A. Umar and Y.-B. Hahn (American Scientific Publ., Los Angeles, 2010).

  2. C. Jiang, X. Sun, G. Lo, et al., Appl. Phys. Lett. 90, 263501 (2007).a

    Article  Google Scholar 

  3. C. Li, Y. Yang, X. Sun, et al., Nanotecnology 18, 135604 (2007).

    Article  Google Scholar 

  4. S. Chu, M. Olmed., Zh. Yang, et al., Appl. Phys. Lett. 93, 181106 (2008).

    Article  Google Scholar 

  5. G. P. Smestad and M. Gratze., J. Chem. Educ. 75, 752 (1998).

    Article  Google Scholar 

  6. Ch. Li, G. Beirne, G. Kamita, et al., J. Appl. Phys. 116, 114501 (2014).

    Article  Google Scholar 

  7. O. Eryu, K. Murakami, K. Takita, and K. Masud., Nucl. Instrum. Methods Phys. Res., Sect. B 33, 665 (1988).

    Article  Google Scholar 

  8. G. Zollo, M. Kalitzova, D. Manno, and G. Vital., J. Phys. D: Appl. Phys. 37, 2730 (2004).

    Article  Google Scholar 

  9. I. Muntele, P. Thevenard, C. Muntele, et al., Mater. Res. Soc. Symp. Proc. 829, B.2.21 (2005).

  10. C. Liu, H. Zhao, Y. Shen, et al., Nucl. Instrum. Methods Phys. Res., Sect. B 326, 23 (2014).

    Article  Google Scholar 

  11. V. Privezentsev, N. Tabachkova, and Yu. Lebedinskii, AIP Conf. Proc. 1583, 109 (2014).

    Article  Google Scholar 

  12. V. Privezentsev, A. Shemukhin, D. V. Petrov, et al., Solid State Phenom. 205–206, 502 (2014).

    Google Scholar 

  13. L. C. Feldman and J. W Mayer, Fundamentals of Surface and Thin Film Analysis (North Holland, Elsevier Science Publ., Amsterdam, 1986).

    Google Scholar 

  14. http://www.sinmra.org.

  15. J. F. Ziegler and J. P. Biersack, SRIM 2008. http://www.srim.org.

    Google Scholar 

  16. ICDD. The International Centre for Diffraction Data. http://www.icdd.com.

  17. NIST X-ray Photoelectron Spectroscopy Database. http://srdata.nist.gov/xps/.

Download references

Author information

Authors and Affiliations

  1. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218, Russia

    V. V. Privezentsev

  2. Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991, Russia

    V. S. Kulikauskas & V. V. Zatekin

  3. National University of Science and Technology “MISiS”, Moscow, 119049, Russia

    K. D. Shcherbachev, N. Yu. Tabachkova, K. B. Eidelman & S. V. Ksenich

  4. National Research University “MPEI”, Moscow, 111250, Russia

    A. A. Batrakov

Authors
  1. V. V. Privezentsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. S. Kulikauskas
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. V. Zatekin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. D. Shcherbachev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. N. Yu. Tabachkova
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. K. B. Eidelman
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. S. V. Ksenich
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. A. A. Batrakov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to V. V. Privezentsev.

Additional information

Original Russian Text © V.V. Privezentsev, V.S. Kulikauskas, V.V. Zatekin, K.D. Shcherbachev, N.Yu. Tabachkova, K.B. Eidelman, S.V. Ksenich, A.A. Batrakov, 2017, published in Poverkhnost’, 2017, No. 6, pp. 56–65.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Privezentsev, V.V., Kulikauskas, V.S., Zatekin, V.V. et al. Influence of annealing temperature and its atmosphere on the properties of zinc implanted silicon. J. Surf. Investig. 11, 625–633 (2017). https://doi.org/10.1134/S1027451017030326

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1027451017030326

Keywords

Search

Navigation