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Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers

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Abstract

The features and results of X-ray diffraction analysis of GaN films are presented. The films are grown by metalorganic vapor-phase epitaxy on c-plane sapphire substrates using GaN or AlN nucleation layers deposited at a low temperature. Measurements of the twist angle and concentrations of Al x Ga1-x N solid solutions are discussed in detail.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia

    Yu. N. Drozdov, M. N. Drozdov, O. I. Khrykin & V. I. Shashkin

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  1. Yu. N. Drozdov
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  2. M. N. Drozdov
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  3. O. I. Khrykin
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  4. V. I. Shashkin
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Additional information

Original Russian Text © Yu.N. Drozdov, M.N. Drozdov, O.I. Khrykin, V.I. Shashkin, 2010, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 12, pp. 26–29.

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Drozdov, Y.N., Drozdov, M.N., Khrykin, O.I. et al. Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers. J. Surf. Investig. 4, 998–1001 (2010). https://doi.org/10.1134/S1027451010060200

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  • DOI: https://doi.org/10.1134/S1027451010060200

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