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Nanorelief formation under ion irradiation of germanium and silicon surfaces

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Abstract

The surface topography of silicon and germanium single crystals formed under 10-keV Ar+ and Ne+ irradiation was studied experimentally. A relief with typical nanometer-scale dimensions is detected using atomic-force microscopy. It is established that the average height of the nanorelief formed depends on the silicon doping levels. It is also shown that the average height is determined by the parameters of ion irradiation.

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Authors and Affiliations

  1. Faculty of Physics, Lomonosov Moscow State University, Leninskie gory, Moscow, 119992, Russia

    V. S. Chernysh, E. S. Soldatov, D. V. Petrov & S. V. Alyshev

  2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie gory, Moscow, 119991, Russia

    A. S. Patrakeev

Authors
  1. V. S. Chernysh
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  2. A. S. Patrakeev
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  3. E. S. Soldatov
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  4. D. V. Petrov
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  5. S. V. Alyshev
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Correspondence to V. S. Chernysh.

Additional information

Original Russian Text © V.S. Chernysh, A.S. Patrakeev, E.S. Soldatov, D.V. Petrov, S.V. Alyshev, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 12, pp. 25–29.

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Chernysh, V.S., Patrakeev, A.S., Soldatov, E.S. et al. Nanorelief formation under ion irradiation of germanium and silicon surfaces. J. Surf. Investig. 1, 717–721 (2007). https://doi.org/10.1134/S1027451007060171

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  • DOI: https://doi.org/10.1134/S1027451007060171

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