Abstract
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a single crystal of topological semimetal WTe2 in the temperature range from 12 to 200 K under magnetic fields up to 9 T. A quadratic temperature dependence of the electrical resistivity in the absence of field and conductivity in a magnetic field is found at low temperatures, which appears to be associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron–hole compensation with a slight predominance of electron charge carriers.
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ACKNOWLEDGMENTS
The authors thank N.G. Bebenin for the useful discussion of the obtained results and valuable advices on their presentation.
Funding
Electrical resistivity studies (sect. 3.1) were performed within the framework of State assignment of the Ministry of Science and Higher Education of the Russian Federation (theme Spin, no. 122021000036-3), supported in part by the Scholarship of the President of the Russian Federation to young scientists and graduate students (A.N. Perevalova, SP-2705.2022.1). Studies on the magnetoresistivity (sect. 3.2) and the Hall effect (section 3.3) were supported by the Russian Science Foundation (grant no. 22-42-02021).
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Translated by O. Kadkin
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Perevalova, A.N., Naumov, S.V., Podgornykh, S.M. et al. Kinetic Properties of a Topological Semimetal WTe2 Single Crystal. Phys. Metals Metallogr. 123, 1061–1067 (2022). https://doi.org/10.1134/S0031918X22601329
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DOI: https://doi.org/10.1134/S0031918X22601329