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Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data

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Abstract

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-fxZryO2 and lanthanum-alloyed hafnia-zirconium oxide films La:HfxZryO2. Fluctuations of thickness in HfxZryO2 do not exceed 3.5%, fluctuations of thickness in La:HfxZryO2 films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, HfxZryO2 films contain 46% HfO2, 54% ZrO2, La:HfxZryO2 films contain 47.5% HfO2, 52.4% ZrO2, 2.5% La2O3.

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Funding

The research was conducted within the project by the Russian Foundation for Basic Research no. 20-57-12003 (ellipsometric measurements) and state assignment no. 030-62019-0005 (analysis of data based on effective-medium theory).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. N. Kruchinin, E. V. Spesivtsev, C. V. Rykhlitsky & V. A. Gritsenko

  2. Novosibirsk State University, 630090, Novosibirsk, Russia

    V. A. Gritsenko

  3. Novosibirsk State Technical University, 630073, Novosibirsk, Russia

    V. A. Gritsenko

  4. NaMLab gGmbH, 01187, Dresden, Germany

    F. Mehmood, T. Mikolajick & U. Schroeder

  5. Chair of Nanoelectronics, TU Dresden, 01062, Dresden, Germany

    T. Mikolajick

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  1. V. N. Kruchinin
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  2. E. V. Spesivtsev
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  3. C. V. Rykhlitsky
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  4. V. A. Gritsenko
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  5. F. Mehmood
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  6. T. Mikolajick
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  7. U. Schroeder
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Correspondence to E. V. Spesivtsev.

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Kruchinin, V.N., Spesivtsev, E.V., Rykhlitsky, C.V. et al. Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data. Opt. Spectrosc. 131, 550–553 (2023). https://doi.org/10.1134/S0030400X23050107

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  • DOI: https://doi.org/10.1134/S0030400X23050107

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