Abstract
The optical properties of GeO x film and GeO x /SiO2 multilayer heterostructures (with thickness of GeO x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO x and interface defects for the case of GeO x /SiO2 multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO x /SiO2 multilayer heterostructures.
Similar content being viewed by others
References
T. Shimizu-Iwayama, S. Nakao, and K. Saitoh, Appl. Phys. Lett. 65, 1814 (1994).
H. Rinnert, M. Vergnat, G. Marchal, and A. Burneau, Appl. Phys. Lett. 72, 3157 (1998).
H. Rinnert, M. Vergnat, and A. Burneau, J. Appl. Phys. 89, 237 (2001).
O. Jambois, H. Rinnert, X. Devaux, and M. Vergnat, J. Appl. Phys. 100, 123504 (2006).
E. B. Gorokhov, V. A. Volodin, D. V. Marin, et al., Semiconductors 39, 1168 (2005).
M. Ardyanian, H. Rinnert, X. Devaux, and M. Vergnat, Appl. Phys. Lett. 89, 011902 (2006).
M. Ardyanian, H. Rinnert, and M. Vergnat, J. Appl. Phys. 100, 113106 (2006).
D. Riabinina, C. Durand, M. Chaker, et al., Nanotechnology 17, 2152 (2006).
L. Skuja, H. Hosono, M. Mizugushi, et al., J. Luminesc. 87–89, 699 (2000).
M. Ardyanian, H. Rinnert, and M. Vergnat, J. Luminesc. 129, 729 (2009).
M. Kapoor, V. A. Singh, and G. K. Johri, Phys. Rev. B 61, 1941 (2004).
A. V. Kolobov, J. Appl. Phys. 87, 2926 (2000).
G. Lucovsky, S. S. Chao, J. Yang, et al., Phys. Rev. B 31, 2190 (1985).
D. A. Jishiashvili and E. R. Kutelia, Phys. Status Solidi B 143, K147 (1987).
P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A 4, 689 (1986).
D. E. Aspens and A. A. Studna, Phys. Rev. B 27, 985 (1983).
Gorachand Ghosh, Opt. Commun. 169, 95 (1999).
N. M. Ravindra, R. A. Weeks, and D. L. Kinser, Phys. Rev. B 36, 6132 (1987).
M. Berthelot, Ann. Chim. Phys. 66, 110 (1862).
C. M. Hurd, J. Phys. C: Solid State Phys. 18, 6487 (1985).
R. W. Collins, M. A. Peasler, and W. Paul, Solid State Commun. 34, 833 (1980).
H. Rinnert and M. Vergnat, Physica E 16, 382 (2003).
H. Rinnert, O. Jambois, and M. Vergnat, J. Appl. Phys. 106, 023501 (2009).
A. S. Bhati, V. N. Antonov, P. Swarminathan, et al., Appl. Phys. Lett. 90, 011903 (2007).
J. J. Mares, J. Kristofik, J. Pangras, and A. Hospodkova, Appl. Phys. Lett. 63, 180 (1993).
Author information
Authors and Affiliations
Corresponding author
Additional information
The article is published in the original.
Rights and permissions
About this article
Cite this article
Marin, D.V., Volodin, V.A., Rinnert, H. et al. Anomalous temperature dependence of photoluminescence in GeO x films and GeO x /SiO2 nano-heterostructures. Jetp Lett. 95, 424–428 (2012). https://doi.org/10.1134/S0021364012080097
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0021364012080097