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Nano-vibration measurements using the photoelectromotive force effect in the GaAs crystal

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Abstract

A broadband, nano-vibration measuring method based on the photoelectromotive force (photo-EMF) effect of semiconductor crystal is presented. A He-Ne-laser homodyne interferometer system is used as a light source and a GaAs crystal is used as a photodetector. The signal beam, which is modulated by the vibration, interferes with the reference beam, and a vibrating interference pattern is created on the surface of the GaAs crystal. Due to the photo-EMF effect, an alternating current signal, which relates to the vibration, is produced. We found the optimum parameters for the measurements by adjustments of the intensity ratio of the two beams, the angle between the beams and the interelectrode spacing on the GaAs crystal. The system can detect the vibration amplitude about several nanometers. The results of measurements of the vibrations of the PZT sample are well coincided with those obtained by TEMPO200 (Bossa Nova Technologies, America) system.

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing, 100044, China

    Xiaojing Gao, Bin Zhang & Qibo Feng

  2. Department of Mechanical Engineering, Oakland University, Rochester, Michigan, 48309, USA

    Xin Xie & Lianxiang Yang

Authors
  1. Xiaojing Gao
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  2. Bin Zhang
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  3. Qibo Feng
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  4. Xin Xie
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  5. Lianxiang Yang
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Correspondence to Bin Zhang.

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Gao, X., Zhang, B., Feng, Q. et al. Nano-vibration measurements using the photoelectromotive force effect in the GaAs crystal. Instrum Exp Tech 59, 470–475 (2016). https://doi.org/10.1134/S0020441216030155

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