Abstract
A diode-transistor generator of high-voltage nanosecond pulses, which is based on an inductive energy storage and an opening switch in the form of an assembly of drift step-recovery diodes (DSRDs) connected in series, is considered. It allows switching of a voltage pulse with an amplitude of 12 kV and a rise time of 4 ns into a load of 75 Ω at a frequency of 10 kHz. The results of investigations of the process of disabling DSRDs with different thicknesses of the base regions and different diffusion-layer profiles are presented. The design of optimized DSRDs with reduced energy losses during disabling is described. It is shown that the use of an assembly of optimized DSRDs in the developed generator provides a twofold increase in the limiting switched energy.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Grekhov, I.V., Efanov, V.M., Kardo-Susoev, A.F., and Shenderey, S.V., Solid-State Electron., 1985, vol. 28, pp. 597–599.
Grekhov, I.V. and Mesyats, G.A., Phys.-Usp., 2005, vol. 49, pp. 703–712.
Korotkov, S.V., Aristov, Yu.V., Kozlov, A.K., Korotkov, D.A., Lyublinskii, A.G., and Spichkin, G.L., Instrum. Exp. Tech., 2012, vol. 55, pp. 605–607.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.V. Korotkov, V.B. Voronkov, Yu.V. Aristov, 2015, published in Pribory i Tekhnika Eksperimenta, 2015, No. 4, pp. 48–52.
Rights and permissions
About this article
Cite this article
Korotkov, S.V., Voronkov, V.B. & Aristov, Y.V. A nanosecond-pulse generator with an optimized diode switch. Instrum Exp Tech 58, 488–492 (2015). https://doi.org/10.1134/S0020441215040077
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0020441215040077