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The comparative study of the photoelectric properties of crystalline and glassy SnGeS3

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Abstract

Comparative investigations of the steady-state characteristics of the photoconductivity for crystalline and glassy tin thiogermanate (SnGeS3) in the temperature range of 100–500 K were performed. It was determined that the loss of the long-range order in SnGeS3 at the crystal-glass transition results in the shift of the fundamental absorption edge to the long-wave region of the spectrum, disappearance of the absorption edge anisotropy and photoconductivity (PC) spectra, and reduction of the electrical conductivity. The presence of the same impurity peaks in PC spectra and the peaks on thermally stimulated current (TSC) curves and the identical character of temperature dependences of photoconductivity and lux-ampere characteristics (LAC) indicate the same type of defects, which generate the localized electronic states in the gap, controlling the processes of trapping and recombination in crystalline and glassy phases of SnGeS3.

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References

  1. Bletskan, D.I., Kristallicheskie i stekloobraznye khal’kogenidy Si, Ge, Sn i splavy na ikh osnove (Crystalline and Glassy Si, Ge, and Sn Chalcogenides and Related Alloys), Uzhgorod: VAT Vidavnitstvo Zakarpattya, 2004, vol. 1.

    Google Scholar 

  2. Feltz, A., Ludwig, W., and Seiss, R., Über Glasbildung und Eeigenschaften von Chalkogenidsystemen (XII). Das Phasendiagramm SnS-GeS2, Krist. Tech., 1978, vol. 13, no. 4, pp. 405–408.

    Article  CAS  Google Scholar 

  3. Fenner, J. and Mootz, D., Über Sulfide der vierten Hauptgruppe vom Typ AIIBIVS3 und die Kristallstruktur des SnGeS3, Z. Anorg. Allg. Chem., 1976, vol. 427, no. 2, pp. 123–130.

    Article  CAS  Google Scholar 

  4. Bletskan, D.I., Kabacij, V.N., Sakal, T.A., and Stefanovych, V.A., Structure and vibrational spectra of MIIAIVB VI3 -type crystalline and glassy semiconductors, J. Non-Cryst. Solids, 2003, vols. 326–327, pp. 77–82.

    Article  Google Scholar 

  5. Popović, Z.V., Molecular vibrational in Sn(Pb)GeS3 and GeS2, Phys. Lett. A, 1983, vol. 94, no. 5, pp. 242–246.

    Article  Google Scholar 

  6. Popović, Z.V., Optical phonons in SnGeS3, Phys. Rev. B: Condens. Matter Mater. Phys., 1985, vol. 32, no. 4, pp. 2382–2387.

    Article  Google Scholar 

  7. Inoue, K., Stergiou, V., and Raptis, Y.S., Popović, Z.V., Vibrational properties of SnGeS3 under high pressure, J. Phys. Soc. Jpn., 2001, vol. 70, no. 7, pp. 2168–2174.

    Article  CAS  Google Scholar 

  8. Jakšić, Z.M., Temperature and pressure dependence of phonon frequencies in GeS2, GeSe2, and SnGeS3, Phys. Status Solidi B, 2003, vol. 239, no. 1, pp. 131–143.

    Article  Google Scholar 

  9. Alpen, U.V., Fenner, J., and Gmelin, E., Semiconductors of the type MeIIMeIVS3, Mater. Res. Bull., 1975, vol. 10, pp. 175–180.

    Article  Google Scholar 

  10. Bletskan, D.I., Polazhinets, N.V., and Chepur, D.V., Photoelectric properties of crystalline and glassy GeSe2, Fiz. Tekh. Poluprovodn. (Leningrad), 1984, vol. 18, no. 2, pp. 223–228.

    CAS  Google Scholar 

  11. Owen, A.E., Electron Transport in Chalcogenide Glasses, Coherence and Energy Transfer in Glasses, New York: Plenum, 1984, pp. 243–278.

    Book  Google Scholar 

  12. Ryvkin, S.M., Photoelectric Phenomena in Semiconductors, Moscow: Fizmatgiz, 1963.

    Google Scholar 

  13. Vlasenko, A.I., Vlasenko, Z.K., and Lyubchenko, A.V., Spectral characteristics of photoconductivity in semiconductors with an exponential fundamental absorption edge, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1999, vol. 33, no. 11, pp. 1295–1299.

    Google Scholar 

  14. Bube, R.H., Photoconductivity of Solids, New York: Wiley, 1960.

    Google Scholar 

  15. Lashkarev, V.E., Lyubchenko, A.V., and Sheinkman, M.K., Neravnovesnye protsessy v fotoprovodnikakh (Nonequilibrium Processes in Photoconductors), Kiev: Naukova Dumka, 1981.

    Google Scholar 

  16. Sal’kov, E.A. and Sheinkman, M.K., A method for determining recombination levels in monopolar photo-conductors, Fiz. Tverd. Tela (Leningrad), 1963, vol. 5, no. 2, pp. 397–399.

    Google Scholar 

  17. Garlick, G.F.J. and Gibson, A.F., The electron trap mechanism of luminescence in sulfide and silicate phosphors, Proc. Phys. Soc., 1948, vol. 60, pp. 574–590.

    Article  CAS  Google Scholar 

  18. Hoogensraaten, W., Electron traps in ZnS phosphors, Philos. Rev. Rep., 1958, vol. 13, p. 515.

    Google Scholar 

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Authors and Affiliations

  1. Uzhgorod National University, ul. Voloshina 54, Uzhgorod, 88000, Ukraine

    M. M. Bletskan & A. A. Grabar

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  1. M. M. Bletskan
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  2. A. A. Grabar
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Correspondence to M. M. Bletskan.

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Published in Russian in Neorganicheskie Materialy, 2013, Vol. 49, No. 11, pp. 1157–1163.

The article was translated by the authors.

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Bletskan, M.M., Grabar, A.A. The comparative study of the photoelectric properties of crystalline and glassy SnGeS3 . Inorg Mater 49, 1071–1077 (2013). https://doi.org/10.1134/S0020168513110022

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  • DOI: https://doi.org/10.1134/S0020168513110022

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