Abstract
We have constructed the T-x phase diagram of the TlGaS2-TlFeS2 system (simple eutectic system, eutectic at 80 mol % TlFeS2 with a melting point of 953 K). The system contains limited series of monoclinic solid solutions based on the ternary end-members. At an annealing temperature of 933 K, the TlGaS2-based solid solution extends to 5 mol % TlFeS2 and the TlFeS2-based solid solution extends to ≅10 mol % TlGaS2. We have examined the effect of partial iron substitution for gallium on the optical properties of melt-grown single crystals of the TlGaS2-based solid solutions and determined their band gap as a function of temperature and Fe concentration.
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References
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Original Russian Text © S.N. Mustafaeva, M.M. Asadov, S.B. Kyazimov, N.Z. Gasanov, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 10, pp. 1110–1113.
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Mustafaeva, S.N., Asadov, M.M., Kyazimov, S.B. et al. T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − x Fe x S2 (0 ≤ x ≤ 0.01) single crystals. Inorg Mater 48, 984–986 (2012). https://doi.org/10.1134/S0020168512090117
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DOI: https://doi.org/10.1134/S0020168512090117